| PART |
Description |
Maker |
| C0805C82311RAC C0805C10312RAC C0805C10411RAC C0805 |
Surface Mount Ceramic Chip Capacitors Extended Values 0805, X7R Dielectric, 25, 50, 100, 200 Volts
|
KEMET[Kemet Corporation]
|
| FDP3672 FDP3672NL |
N-Channel PowerTrench MOSFET, 105V, 41A, 0.033 Ohms @ VGS = 10V, TO-220 Package 5.9 A, 105 V, 0.033 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
N-Channel PowerTrench MOSFET 105V, 41A, 33mз 5.9 A, 105 V, 0.033 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Fairchild Semiconductor, Corp.
|
| IRF6655 |
DirectFET Power MOSFET Typical values (unless otherwise specified)
|
International Rectifier
|
| 0805PS-472KLB |
0805PS Power Chip Inductors 20 values, 6 of each
|
Coilcraft lnc.
|
| FZ1600R17KF6B2 |
Hochstzulassige Werte / Maximum rated values
|
http://
EUPEC[eupec GmbH]
|
| DF200R12KE3 |
Hochstzulassige Werte / maximum rated values
|
eupec GmbH
|
| FZ1800R12KL4C |
Hochstzulassige Werte / Maximum rated values
|
eupec GmbH
|
| MKP1837 |
C-values 0.01 μF - 0.1 μF, Voltage 160 VDC, Tolerances to 1%, Low losses, PCM 5
|
Vishay
|
| MKC1860 |
C-values 0.01 μF - 10 μF, Voltage 63 - 400 VDC, Flat and linear TC, Low profile, AXIAL
|
Vishay
|
| BSM75GB120DLC |
Hchstzulssige Werte Maximum rated values 170 A, 1200 V, N-CHANNEL IGBT
|
Infineon Technologies AG
ETC
EUPEC[eupec GmbH]
|
| NTHS0402 NTHS0805 NTHS0603 NTHS1206N06N2201JE |
Extended resistance values available in standard sizes, Allows design flexibility for use with hybrid circuitry
|
Vishay Siliconix
|
| 0603CS-1N6XJLU 0603CS-1N8XJLU 0603CS-10NXJLU 0603C |
0603CS Chip Inductors, 26 values, 10 of each
0603CS Chip Inductors, 26 values, 10 of each
|
Coilcraft lnc.
|
|
